| Manufacturer | Ferrotec |
| Product Model | Photoveel II / Photoveel II-S |
Photoveel II and Photoveel II-S are materials that promote a new generation of probe cards. Photoveel II and Photoveel II-S can drill holes as small as 40 microns in diameter and 60 microns apart.
A variety of thermal expansion coefficient ranges are available.
Hole diameters as small as 30 microns
Specification Table：
Fine grain structure
Excellent Mechanical properties to achieve precision
Specifications
| Property | Unit | Photoveel II | Photoveel II-S |
|---|---|---|---|
| Main component purity | wt% | – | – |
| Color | – | Light grey | Light grey / black |
| Density | g/cm³ | 2.56 | 3.5 |
| Water absorption | % | 0 | 0 |
| Bending strength | MPa | 440 | 320 |
| Young's modulus | GPa | 157 | 130 |
| Vickers hardness | GPa | 2.3 | 2.3 |
| Max. operating temperature | °C | 1000 (non-oxidising) | 1000 (non-oxidising) |
| Avg. coeff. of thermal expansion | 10−6/°C | 1.4 (RT–400 °C) | 4.7 (RT–150 °C) |
| Coeff. of thermal conductivity | W/m·K | 50 | 23 |
| Thermal-shock resistance | ΔT (°C) | 600 | 400 |
| Volume resistivity @25 °C | Ω·cm | 1015 | 1015 |
| Volume resistivity @300 °C | Ω·cm | 1014 | 1011 |
| Volume resistivity @500 °C | Ω·cm | 1011 | 107 |
| Volume resistivity @800 °C | Ω·cm | 107 | 104 |
| Dielectric constant (1 GHz) | – | 5.5 | 9.0 |
| Dielectric loss (1 GHz) | 10−4 | 10 | 25 |
| Q factor (1 GHz) | 104 | 0.10 | 0.04 |
| Dielectric breakdown voltage | kV/mm | 35 | 30 |
| Main characteristics | – | High strength; low thermal expansion; precision machinability | High strength; thermal expansion similar to silicon; precision machinability |
